The semiconductor industry is witnessing a potential game-changing development as Harbin Institute of Technology (HIT) announces a breakthrough in Extreme Ultraviolet (EUV) light source technology, marking a significant step forward in China's pursuit of advanced semiconductor manufacturing capabilities.
HIT's breakthrough in EUV light source technology signifies a significant advancement for China's semiconductor manufacturing capabilities |
Revolutionary DPP Technology
HIT has successfully developed a 13.5nm EUV light source using Discharge-Produced Plasma (DPP) technology, diverging from the traditional Laser-Produced Plasma (LPP) approach used by industry leader Cymer. This innovative method employs particle acceleration radiation instead of lens technology, demonstrating higher efficiency and precision despite its increased technical complexity.
This advanced industrial machine symbolizes HIT's innovative DPP technology for the 135nm EUV light source |
Technical Advantages
The new DPP-based system boasts several significant advantages, including high energy conversion efficiency, lower operational costs, and a compact design. The technology shows promise in overcoming Moore's Law limitations while potentially reducing the overall cost of chip manufacturing. The system's development has already progressed through key testing phases, with HIT securing seven core patents related to the technology.
Investment and Development Timeline
A USD 11 billion investment has been approved for the project, led by the Harbin subsidiary of National Instruments Precision Group. The development timeline shows remarkable progress, with the initial prototype unveiled in 2022, followed by a working model in 2023, and successful critical testing in early 2024.
Industry Impact and Future Prospects
While this breakthrough represents a significant step forward, industry experts note that several challenges remain before full commercialization. These include improving light source stability, system optimization, and commercial adaptation. According to industry analysts, domestic EUV lithography equipment might become available between 2026 and 2028, potentially reshaping the competitive landscape of the global semiconductor industry.
Market Implications
The development could have far-reaching implications for companies like SMIC, which currently faces restrictions on accessing advanced semiconductor manufacturing equipment. Success in developing domestic EUV technology could enable Chinese semiconductor manufacturers to overcome current technological barriers and compete more effectively in the global market.